The diffusion bonding process. In-between the 2 OO3 and this interface layer, it’s achievable to observe a thin layer ( 1 ) composed of alternated diverse grey layer, it really is attainable to observe a thin layer (1 ) composed of alternated distinctive grey columnar compact grains. Nonetheless, it it was not achievable to carry out EDS analyses owingits columnar small grains. On the other hand, was not feasible to carry out EDS analyses owing to to reduced thickness. its reduced thickness.(a)(b)(c)Figure six. SEM photos on the joints with thin film interlayer processed at at (a) C for 60 (b) (b) C for 10 min, and Figure 6. SEM images of the joints with Ti Ti thin film interlayer processed(a) 950 950for 60 min,min,1000 1000 for 10 min, and (c) C for 60 min. min. (c) 1000 1000 forIncreasing the bonding time at 1000 C to 60 min promotes the transform inside the thickness Rising the bonding time at 1000 to 60 min promotes the modify in the thickof the layers that compose the interface. This interface is often observed in Figure 6c. The ness of the layers that compose the interface. This interface can be observed in Figure 6c. improve in the bonding time final results in the lower within the -Ti phase and also the growth in the The improve in the bonding time outcomes within the decrease in the -Ti phase plus the development Ti3 Al layer with TiAl particles close to Al2 O3 (Z4 in Figure 6c). from the Ti3Al layer with TiAl particles close to Al2O3 (Z4 in Figure 6c). The confirmation with the phases in the interfaces was conducted by EBSD, which The confirmation with the phases at the interfaces was carried out by EBSD, which alallows Kikuchi patterns of tiny zones to become obtained as a FAUC 365 In Vitro Zone–not detected. –not detected.Doable Phases -TiPossible Phases -Ti2-Ti3Al -Ti -Ti -Ti -Ti3 Al 2-Ti3Al2 -TiAl -Ti -Ti 2 -Ti3 Al -TiAl -Ti -Ti -Ti -Ti -Ti 2-Ti3Al 2 -Ti3 Al -Ti -Ti -Ti -Ti 2-Ti3Al two -Ti3 Al 2 -Ti3 -TiAl 2-Ti3AlAl -TiAl(b)two(a)(c)Figure 7. (a) SEM 7. (a) SEM photos in the interface created with Ti thin film processed at 1000for 60 min, (b)(b) EBSD Kikuchi Figure photos of your interface made with Ti thin film processed at 1000 C for 60 min, EBSD Kikuchi patterns of your grain marked asof the(a) indexed asas 1 in (a)and (c) EBSD Kikuchi patterns of the g.