Rface Tenidap Technical Information charge density Q target Si Figure four. The dependence of normalized
Rface charge density Q target Si Figure 4. The dependence of normalized triggering time around the surface charge density Qs ,, target Si – and GaAs, p-type. Uct 0.five V, Uan = 1 Ug = 3 The dopant concentration, [cm-3], three ], equal p-Si: (1) and GaAs, p-type. Uct == 0.5 V,Uan = 1 V,V, Ug3=V. V. The dopant concentration, [cm equal for for p-Si: 12 (two) 12; (two); 10141014 ; (3) ;1016 ; for p-GaAs: (4) 1012; 1012 ; (five) (6)14 ; 16. 1016 . 16 and and for p-GaAs: (four) (5) 1014; 10 10 (six) (1) ten ten ; (3)The calculated graphs with means from the potential U = pQs + function that the Additional, it was calculated bythe prospective shift valueapproximationU0 (Table 1) are shown on a logarithmicdependence on theTheir linearity within a wide array of the surface electric field includes a steep scale in Figure 4. surface charge density for absolute minimum charge density, as 5 as Cm-2, which determined the ligands within the range of up to as a values of much less thanwell10-4for unique concentrations of higher sensitivity of your devicefour Figure four. The dependence of normalized triggering time on the surface charge density Q , target Si orders, ML-SA1 web sensor. is in accordance with all the approximation by the exponential function, and with and GaAs, Such Uct = 0.5 V, Uan = 1 V, Ug = 3 V.obtained concentration, [cm-3], equal for p-Si: (1) within a wide variety p-type. dependencies were The dopant at unique levels of doping expressions (two) and (4). The positive aspects on the 1012; (two) 1014; (3) 1016; and for p-GaAs: (4) 1012; (five) 1014; (6) 1016. weak doping of semiconductors at a level of (Figure five). 1012 cm-3 are obvious for getting the highest sensitivity of surface charge detection. Further, it waswas calculated by signifies of the possible approximation function that the Additional, it calculated by signifies of the prospective approximation function that the electric field has a steep dependence around the surface charge density for absolute minimum electric field has a steep dependence on the surface charge density for absolute minimum values of less than 5 10-4 Cm-2, which determined the higher sensitivity of your device as a – C – valuesSuch dependencies were 4obtained2 , which determined the high sensitivity in the device as sensor. of significantly less than five 10 at various levels of doping within a wide range a sensor. (Figure 5). Such dependencies had been obtained at distinct levels of doping within a wide variety (Figure five).Figure The dependence of electric electric surface charge density at distinctive levels at Figure five. five. The dependence offield on thefield around the surface charge density of p- distinctive levels of dopant. Cutpoint X = 2.three m, Y2.three , Y = 0.5 . cm-3: (1) 1012, (two) 10cm-3 :density ten(two) 1014 , (3) 5levels14 , (four) p-dopant.The dependence 0.5 m. GaAs,field on the surface charge 1)141012 15. different ten of pFigure 5. Cutpoint X = = of electric p-type, GaAs, p-type, 14, (3) five 10 , (4) , at dopant. Cutpoint X = two.three m, Y = 0.five m. GaAs, p-type, cm-3: (1) 1012, (two) 1014, (3) 5 1014, (four) 1015. 1015 .Biosensors 2021, 11, 397 x FOR PEER REVIEWof 11 77of-Theelectric -5 10-14 14 field near the surface reached higher values the the order104 The electric-5 10- field near the surface reached higher values in in order of of four V(see Figure 5). Such a Such a field acts perpendicular for the surface but in addition along Vcm-1cm-1 (see Figure five). field acts not only not only perpendicular towards the surface but 10 it. Inalong it. Inside a robust electric field, anof chargedof charged particles could be separated also a robust electric field, an ensemble.